MRF5S21090HR3_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
µAdc
I_DSS
—
—
1
µAdc
I_GSS
—
—
1
µAdc
On Characteristics (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 850 mAdc)
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
2.5
2.9
3.5
Vdc
V_GS(Q)
—
3.9
—
Vdc
V_DS(on)
—
0.25
—
Vdc
g_fs
—
5
—
S
C_rss
—
1.7
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 850 mA, P_out = 19 W Avg., f = 2112.5 MHz,
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
12.5
14.5
—
dB
Drain Efficiency
η_D
24
26
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--40.5
--38
dBc
Input Return Loss
IRL
—
--15
--9
dB
1. Part is internally matched both on input and output.
MRF5S21090HR3 MRF5S21090HSR3
2
RF Device Data
Freescale Semiconductor