MRF5S21090HR3_08 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
40
--15
V_DD = 28 Vdc, I_DQ = 850 mA, f1 = 2135 MHz,
35 f2 = 2145 MHz, 2 x W--CDMA, 10 MHz
--20
@ 3.84 MHz Bandwidth, PAR = 8.5 dB
30 _{@ 0.01% Probability (CCDF)}
--25
25
η_D
--30
20
G_ps
15
10
IM3
--35
--40
ACPR --45
5
--50
0
1
--55
10
P_out, POWER (WATTS) W--CDMA
Figure 8. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
100
10
1
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
0.001 _{3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =}
8.5 dB @ 0.01% Probability on CCDF
.0001
0
2
4
6
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
--20
3.84 MHz
--30
Channel BW
--40
--50
--60
--70
--80
--90
--100 _{--IM3 in}
--ACPR in +ACPR in
3.84 MHz BW 3.84 MHz BW
--110 ^{3.84 MHz BW}
--120
--25 --20 --15 --10 --5 0 5 10
f, FREQUENCY (MHz)
+IM3 in
3.84 MHz BW
15 20 25
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21090HR3 MRF5S21090HSR3
6
RF Device Data
Freescale Semiconductor