MRF5S21090HR3_08 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15
40
14 ^Gps
V_DD = 28 Vdc, P_out = 19 W (Avg.), I_DQ = 850 mA
35
13 η_D
2--Carrier W--CDMA, 10 MHz Carrier Spacing
30
12
11 IRL
10
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
25
20
--20
--10
9
--25
--15
8
7 ^IM3
--30
--20
--35
--25
6
ACPR
5
--40
--30
--45
--35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
17
V_DD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
16 ^{IDQ = 1200 mA}
1000 mA
15 _{850 mA}
14 _{650 mA}
13 _{450 mA}
12
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
--20
--25
3rd Order
--30
--35
5th Order
--40
--45
7th Order
--50
--55
--60
0.1
V_DD = 28 Vdc, P_out = 90 W (PEP), I_DQ = 850 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
10
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
--15
V_DD = 28 Vdc
--20 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two--Tone Measurement, 10 MHz Tone Spacing
--25
--30
I_DQ = 450 mA
--35
1200 mA
--40
--45
650 mA
--50
1
10
1000 mA
850 mA
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
57
55
Ideal
P3dB = 51.17 dBm (130.9 W)
53
51 ^{P1dB = 50.47 dBm (111.4 W)}
49
Actual
47
V_DD = 28 Vdc, I_DQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 2140 MHz
45
30
32
34
36
38
40
42
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
5