MRF5S19150HR3_08 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 1990 MHz
Z_load
f = 1930 MHz
Z_o = 10 Ω
f = 1930 MHz
Z_source
f = 1990 MHz
V_DD = 28 V, I_DQ = 1400 mA, P_out = 32 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1.89 - j5.24
1.06 - j1.58
1960
1.64 - j5.29
0.88 - j1.37
1990
1.3 - j5.49
0.90 - j1.21
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 11. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5S19150HR3
7