MRF5S19150HR3_08 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
45
40
V_DD = 28 Vdc, I_DQ = 1400 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
35 ^{2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth}
PAR = 9.8 dB @ 0.01% Probability (CCDF)
30
25
−25
IM3
−30
η_{D −35}
−40
−45
20
−50
ACPR
15
−55
10
G_{ps −60}
5
−65
0
1
−70
10
P_out, OUTPUT POWER (WATTS) AVG., N−CDMA
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain, Drain Efficiency versus Output Power
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200
220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
0
1.2288 MHz
−10
Channel BW
−20
−IM3 in
−30
1.2288 MHz
Integrated BW
−40
+IM3 in
1.2288 MHz
Integrated BW
−50
−60
−70
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
−80
−90
−100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 10. 2 - Carrier N - CDMA Spectrum
MRF5S19150HR3
6
RF Device Data
Freescale Semiconductor