MRF5S19150HR3_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 360 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1400 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.6 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3.6 Adc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
V_GS(th)
2.5
2.8
3.5
Vdc
V_GS(Q)
—
3.8
—
Vdc
V_DS(on)
—
0.24
—
Vdc
g_fs
—
9
—
S
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
3.1
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1400 mA, P_out = 32 W Avg., f1 = 1987.5 MHz,
f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
13
14
—
dB
Drain Efficiency
η_D
24
26
—
%
Intermodulation Distortion
IM3
—
- 36.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 50
- 48
dBc
Input Return Loss
IRL
—
- 17
-9
dB
1. Part internally matched both on input and output.
MRF5S19150HR3
2
RF Device Data
Freescale Semiconductor