MRF5S19150HR3_08 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
15
40
14 G_ps
35
13 ^ηD
30
12
25
11
V_DD = 28 Vdc, P_out = 32 W (Avg.), I_DQ = 1400 mA
20
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
10 _IRL
−30
−10
9
−35
−20
8 ^IM3
7
ACPR
6
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−40
−30
−45
−40
−50
−50
5
−55
−60
1900
1920
1940
1960
1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ P_out = 32 Watts Avg.
16
I_DQ = 2100 mA
15
1700 mA
1400 mA
14
1050 mA
13
700 mA
12
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−15
V_DD = 28 Vdc
−20 _{f1 = 1958.75 MHz, f2 = 1961.25 MHz}
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30
I_DQ = 2100 mA
1700 mA
−35
−40
700 mA
−45
−50
−55
1
1050 mA
10
1400 mA
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
−20
−25
−30 _{3rd Order}
−35
−40 _{5th Order}
−45
7th Order
−50
V_DD = 28 Vdc, P_out = 150 W (PEP), I_DQ = 1400 mA
−55
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−60
0.1
1
10
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
59
58
P3dB = 53.71 dBm (234.96 W)
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51
V_DD = 28 Vdc, I_DQ = 1400 mA
50
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
49
35 36 37 38 39 40 41 42 43 44 45
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19150HR3
5