MRF5S19100HR3 Datasheet, PDF (7/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1990 MHz
Z_load
f = 1930 MHz
f = 1930 MHz
f = 1990 MHz
Z_source
Z_o = 10 Ω
V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 22 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
4.45 - j5.32
4.53 - j5.40
5.12 - j5.45
1.98 - j2.58
1.83 - j2.55
1.60 - j2.15
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 12. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF5S19100HR3 MRF5S19100HSR3
7