MRF5S19100HR3 Datasheet, PDF (6/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
35
V_DD = 28 Vdc, I_DQ = 1000 mA
30 f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz
25 Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
20
15
10
−21
10⁹
η_D
−28
IM3
−35
10⁸
−42
ACPR
−49
G_ps
10⁷
−56
5
−63
0
1
−70
10
75
P_out, OUTPUT POWER (WATTS) AVG.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
−10
Channel BW
10
−20
−IM3 in
+IM3 in
1
−30
1.2288 MHz
1.2288 MHz
Integrated BW
Integrated BW
0.1
−40
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
−50
Through 13) 1.2288 MHz Channel Bandwidth
0.01 _{Carriers. ACPR Measured in 30 kHz Bandwidth @}
−60
±885 kHz Offset. IM3 Measured in 1.2288 MHz
0.001
0.0001
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
−70
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
−80
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
−100
Figure 10. 2 - Carrier CCDF N - CDMA
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5
f, FREQUENCY (MHz)
Figure 11. 2 - Carrier N - CDMA Spectrum
MRF5S19100HR3 MRF5S19100HSR3
6
RF Device Data
Freescale Semiconductor