MRF5S19100HR3 Datasheet, PDF (5/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15
40
14 ^Gps
35
13 η_D
30
12
25
11
V_DD = 28 Vdc, P_out = 22 W (Avg.), I_DQ = 1000 mA
20
10 ^{IRL 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing}
−30
−10
9
IM3
8
1.2288 MHz Channel Bandwidth
7
PAR = 9.8 dB @ 0.01% Probability (CCDF)
ACPR
6
−35
−15
−40
−20
−45
−25
−50
−30
5
−55
−35
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
15 ^{IDQ = 1500 mA}
1300 mA
14 ^{1000 mA}
760 mA
13
530 mA
12
11
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 1000 mA
−30 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1960 MHz
−35 ^{3rd Order}
−40
−45
5th Order
−50
7th Order
−55
0.1
1
10
40
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
−15
V_DD = 28 Vdc
−20 f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−25
−30
1300 mA
I_DQ = 1500 mA
−35
−40
530 mA
−45
1000 mA
−50
760 mA
−55
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
58
57
Ideal
56
55
P3dB = 51.98 dBm (157.81 W)
54
53
P1dB = 51.3 dBm (135.01 W)
52
Actual
51
50
49
48
V_DD = 28 Vdc, I_DQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
47
f = 1960 MHz
46
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19100HR3 MRF5S19100HSR3
5