MRF5S19100HR3 Datasheet, PDF (2/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 240 μAdc)
V_GS(th)
—
2.7
—
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1000 mAdc)
V_GS(Q)
—
3.7
—
Vdc
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.4 Adc)
V_DS(on)
—
0.26
—
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2.4 Adc)
g_fs
—
6.3
—
S
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 28 Vdc, V_GS = 0, f = 1.0 MHz)
C_rss
—
2.2
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain
G_ps
12.5
13.9
—
dB
Drain Efficiency
η_D
24
25.5
—
%
Intermodulation Distortion
IM3
—
- 36.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 50.7
- 48
dBc
Input Return Loss
IRL
—
- 13
-9
dB
1. Part is internally matched both on input and output.
MRF5S19100HR3 MRF5S19100HSR3
2
RF Device Data
Freescale Semiconductor