English
Language : 

MRF374A_06 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors
TYPICAL CHARACTERISTICS
VDD = 28 Vdc
18
VDD = 28 Vdc
17.5 IDQ = 750 mA
Tone Spacing = 6 MHz
17
16.5
16
15.5
470 MHz
560 MHz
760 MHz
660 MHz
860 MHz
VDD = 32 Vdc
18
VDD = 32 Vdc
17.5 IDQ = 750 mA
Tone Spacing = 6 MHz
17
16.5
16
15.5
470 MHz
560 MHz
760 MHz
660 MHz
860 MHz
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain versus Peak Output Power
in Broadband Circuit
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 13. Power Gain versus Peak Output Power
in Broadband Circuit
45
VDD = 28 Vdc
IDQ = 750 mA
35 Tone Spacing = 6 MHz
25
860 MHz
560 MHz
660 MHz
470 MHz
15
5
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 14. Drain Efficiency versus Peak Output Power
in Broadband Circuit
40 VDD = 32 Vdc
IDQ = 750 mA
Tone Spacing = 6 MHz
30
20
860 MHz
560 MHz
660 MHz
470 MHz
10
0
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 15. Drain Efficiency versus Peak Output Power
in Broadband Circuit
−25
VDD = 28 Vdc
IDQ = 750 mA
−30 Tone Spacing = 6 MHz
660 MHz
−35
560 MHz
−40
−45
860 MHz
760 MHz
470 MHz
−50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 16. Intermodulation Distortion versus
Peak Output Power in Broadband Circuit
RF Device Data
Freescale Semiconductor
−25
VDD = 32 Vdc
IDQ = 750 mA
−30 Tone Spacing = 6 MHz
660 MHz
−35
560 MHz
860 MHz
−40
760 MHz
−45
470 MHz
−50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 17. Intermodulation Distortion versus
Peak Output Power in Broadband Circuit
MRF374A
7