MRF374A_06 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
40
−20
35
−25
30
−30
25
−35
20
G_ps
−40
15
IMR
−45
10
5
η
0
0.1
1
−50
V_DD = 32 Vdc
I_DQ = 1.1 A
−55
f = 860 MHz
−60
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 8. 8 - VSB Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
19
18 I_DQ = 1.0 A
800 mA
17 _{600 mA}
16 _{400 mA}
15 _{200 mA}
14
V_DD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
13
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain versus Peak Output Power
in Narrowband Circuit
−20
−25
I_DQ = 200 mA
−30
400 mA
−35
−40
600 mA
−45
800 mA
−50
1.0 A
−55
1
10
V_DD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 10. Intermodulation Distortion versus
Peak Output Power in Narrowband Circuit
50
40
30
20
V_DD = 32 Vdc
10
I_DQ = 800 mA
f = 857 MHz
nFrequency = 6 MHz
0
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 11. Drain Efficiency versus Peak Output Power
in Narrowband Circuit
MRF374A
6
RF Device Data
Freescale Semiconductor