MRF374A_06 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large - signal, common source amplifier applications in
28/32 volt transmitter equipment.
• Typical Two - Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — - 32.5 dBc
• Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Differential Large - Signal Impedance Parameters
• RoHS Compliant
Document Number: MRF374A
Rev. 5, 5/2006
MRF374A
470- 860 MHz, 130 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F - 04, STYLE 1
NI - 650
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +70
- 0.5, +15
302
1.72
- 65 to +150
150
200
Value
0.58
Class
1 (Minimum)
M2 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF374A
1