MRF374A_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
18
V_DD = 32 Vdc
17.5
17
28 Vdc
16.5
16
15.5
15
400
P_out = 100 W (PEP)
I_DQ = 750 mA
nFrequency = 6 MHz
500
600
700
800
900
f, FREQUENCY (MHz)
Figure 2. Gain versus Frequency
in Broadband Circuit
−15
P_out = 100 W (PEP)
−20 I_DQ = 750 mA
nFrequency = 6 MHz
−25
−30
V_DD = 28 Vdc
−35
−40
32 Vdc
−45
−50
400
500
600
700
800
900
f, FREQUENCY (MHz)
Figure 3. Intermodulation Distortion versus
Frequency in Broadband Circuit
45
P_out = 100 W (PEP)
40 ^{IDQ = 750 mA}
nFrequency = 6 MHz
35
V_DD = 28 Vdc
30
32 Vdc
25
20
400
500
600
700
800
900
f, FREQUENCY (MHz)
Figure 4. Drain Efficiency versus Frequency
in Broadband Circuit
20
40
G_ps
15
35
V_DD = 32 Vdc
P_out = 100 W (PEP)
10
I_DQ = 750 mA
30
nFrequency = 6 MHz
η
D
5
25
IRL
0
20
400
500
600
700
800
900
f, FREQUENCY (MHz)
Figure 5. Performance in Broadband Circuit
200
20
150
15
100
C_iss
10
50
C_oss
5
C_rss
0
0
0
10
20
30
40
50
60
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
40
−20
35
V_DD = 32 Vdc
I_DQ = 1.1 A
−25
30 ^{f = 860 MHz}
−30
2 K Mode COFDM
25 ^{64 QAM}
−35
10.5 Peak/Avg. Ratio
20
G_ps
−40
15
IMR
−45
10
−50
5
η
−55
0
−60
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. COFDM Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
RF Device Data
Freescale Semiconductor
MRF374A
5