MRF21120R6 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Z_o = 10 Ω
f = 2110 MHz
f = 2170 MHz
Z_source
Z_load
f = 2170 MHz ^{f = 2110 MHz}
V_DD = 28 V, I_DQ = 1000 mA, P_out = 120 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
3.7 - j2.0
3.5 - j2.4
4.9 - j2.8
5.1 - j2.7
2170
3.1 - j2.5
5.2 - j2.5
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
−
Z _source
−
+
Z _load
Output
Matching
Network
Figure 9. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF21120R6
7