MRF21120R6 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
14
−20
13
1800 mA
1500 mA
12
1300 mA
1100 mA
11
1000 mA
850 mA
10
600 mA
9
0.10
1.0
V_DD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Power Gain versus Output Power
13
G_ps
12
11
η
10
9 ^{VDD = 28 Vdc, IDQ = 1000 mA}
Two−Tone, 100 kHz Tone Spacing
8
VSWR
7
6
IMD
5
2100
2120
2140
2160
2180
f, FREQUENCY (MHz)
Figure 5. Class AB Broadband
Circuit Performance
50
45
40
35
−24
−26
−28
−30
−32
2200
−30
−40
600 mA
−50
1800 mA
1500 mA
1300 mA
850 mA
1100 mA
V_DD = 28 Vdc
−60
1000 mA
f1 = 2170.0 MHz
f2 = 2170.1 MHz
0.10
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion
versus Output Power
Ref Lv1
−5 dBm
MARKER 1 [T1] RBW
−22.77 dBm VBW
2.17000000 GHz SWT
30 kHZ RF Att
1 MHz
2 s Unit
10 dB
dBm
−10
1 [T1]
A
−22.77 dBm
−20
1
2.17000000 GHz
CH PWR
−2.95 dBm
−30
ACR UP
−45.14 dB
−40
ACR LOW
−45.45 dB _1RM
−50
2.0
−60
−70
1.5 _−80
−90 c11
1.0 ^−100
Center 2.17 GHz
c11
c0
1.5 MHz
cu1
c0
cu1
Span 15 MHz
Figure 6. 2.17 GHz W - CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
14
60
G_ps
12
40
10
20
η
8
0
V_DD = 28 Vdc
6
I_DQ = 1000 mA
−20
f = 2170 MHz
4 ^{ACPR DOWN}
−40
ACPR UP
2
1.0
−60
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W - CDMA)
13
80
12
60
G_ps
11
40
10
20
η
9
0
8 ^{VDD = 28 Vdc, IDQ = 1000 mA}
−20
f = 2170.0 MHz, f2 = 2170.1 MHz
7
−40
IMD
6
−60
5
0.10
1.0
−80
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
MRF21120R6
6
RF Device Data
Freescale Semiconductor