MRF21120R6 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) ⁽¹⁾ (continued)
Power Output, 1 dB Compression Point
(V_DD = 28 Vdc, CW, I_DQ = 1000 mA, f1 = 2170.0 MHz)
Common- Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 1000 mA,
f1 = 2170.0 MHz)
P1dB
—
120
—
W
G_ps
—
10.5
—
dB
Drain Efficiency
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 1000 mA,
f1 = 2170.0 MHz)
η
—
42
—
%
1. Device measured in push - pull configuration.
RF Device Data
Freescale Semiconductor
MRF21120R6
3