MRF21120R6 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics ⁽¹⁾
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 μAdc)
V_(BR)DSS
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc )
I_GSS
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
On Characteristics
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 V, I_D = 200 μA)
Gate Quiescent Voltage ⁽³⁾
(V_DS = 28 V, I_D = 1000 mA)
Drain- Source On - Voltage ⁽¹⁾
(V_GS = 10 V, I_D = 2 A)
Dynamic Characteristics ^{(1, 2)}
g_fs
V_GS(th)
V_GS(Q)
V_DS(on)
Reverse Transfer Capacitance
C_rss
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Functional Tests ⁽³⁾ (In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Common- Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Common- Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 1000 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Device measured in push - pull configuration.
Min
65
—
—
—
2.5
3
—
—
10.5
30
—
—
—
—
—
—
—
Typ
—
—
—
4.8
3
3.9
0.38
2.8
11.4
34.5
- 31
- 12
11.5
11.5
34.5
- 31
- 12
Max
Unit
—
Vdc
1
μAdc
10
μAdc
—
S
3.8
Vdc
5
Vdc
0.5
Vdc
—
pF
dB
—
—
%
dB
- 28
-9
dB
—
dB
—
dB
—
%
—
dB
—
dB
(continued)
MRF21120R6
2
RF Device Data
Freescale Semiconductor