MRF21010LR1_06 Datasheet, PDF (7/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PACKAGE DIMENSIONS
2X Q
B
G
1
aaa M T A M B M
B
(FLANGE)
3
2
2X D
bbb M T A M B M
2X K
N
(LID)
ccc M T A M B M
E
C
H
M
(INSULATOR)
T
SEATING
PLANE
bbb M T A M B M
A
A
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R
(LID)
ccc M T A M B M
F
S
(INSULATOR)
aaa M T A M B M
INCHES
DIM MIN MAX
A 0.795 0.805
B 0.225 0.235
C 0.125 0.175
D 0.210 0.220
E 0.055 0.065
F 0.004 0.006
G 0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
Q 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
5.72 5.97
3.18 4.45
5.33 5.59
1.40 1.65
0.10 0.15
14.28 BSC
1.96 2.21
5.59 6.35
9.02 9.27
9.07 9.22
3.18 3.43
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360B - 05
ISSUE G
NI - 360
MRF21010LR1
A
B
A
(FLANGE)
1
2
B
(FLANGE)
2X D
2X K
bbb M T A M B M
N
(LID)
ccc M T A M B M
E
C
PIN 3
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
R
(LID)
ccc M T A M B M
F
H
S
(INSULATOR)
aaa M T A M B M
360C - 05
ISSUE E
NI - 360S
MRF21010LSR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
D 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53 9.78
5.72 5.97
2.67 3.94
5.33 5.59
0.89 1.14
0.10 0.15
1.45 1.70
2.16 2.92
9.02 9.27
9.07 9.22
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
7