MRF21010LR1_06 Datasheet, PDF (5/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
40
0
35
η
−5
30
−10
25
IRL
−15
V_DD = 28 Vdc, P_out = 10 W (PEP), I_DQ = 100 mA
20 _{Two Tone Measurement, 100 kHz Tone Spacing}
−20
15
10
5
0
2000 2080
G_ps
IMD
2110 2140 2170
f, FREQUENCY (MHz)
−25
−30
−35
−40
2200 2280
Figure 4. Class AB Broadband Circuit Performance
30
−10
V_DD = 28 Vdc, I_DQ = 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
25 ^{(15 Channels)}
−20
20
η
−30
15
G_ps
−40
10
ACPR
−50
5
0.5
1
1.5
2
2.5
3
P_out, OUTPUT POWER (WATTS Avg.) W−CDMA
−60
3.5
Figure 5. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
V_DD = 28 Vdc, f = 2140 MHz
−30 Two Tone Measurement,
100 kHz Tone Spacing
−35
−40
80 mA
100 mA
−45
150 mA
−50
−55
130 mA
−60
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
−20
−25 ^{VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz}
Two Tone Measurement, 100 kHz Tone Spacing
−30
3rd Order
−35
−40
−45
5th Order
−50
−55
7th Order
−60
−65
−70
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
14.5
V_DD = 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
14.0
150 mA
13.5
130 mA
100 mA
13.0
12.5
80 mA
12.0
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
15
−30
P_out = 10 W (PEP), I_DQ = 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
−32
14
−34
G_ps
−36
13
−38
IMD
−40
12
−42
22
26
28
30
32
V_DD, DRAIN VOLTAGE (VOLTS)
Figure 9. Intermodulation and Gain versus Supply
Voltage
RF Device Data
Freescale Semiconductor
MRF21010LR1 MRF21010LSR1
5