MRF21010LR1_06 Datasheet, PDF (6/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 1990 MHz
Z_load
f = 2230 MHz
f = 1990 MHz
Z_source
Z_o = 10 Ω
f = 2230 MHz
V_DD = 28 V, I_DQ = 100 mA, P_out = 10 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
1990
2110
2.85 - j4.38
2.89 - j5.04
2.93 - j1.71
2.76 - j2.28
2230
2.73 - j6.19
2.83 - j2.59
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 10. Series Equivalent Source and Load Impedance
MRF21010LR1 MRF21010LSR1
6
RF Device Data
Freescale Semiconductor