MRF21010LR1_06 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D =10 μA)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 V, I_D = 50 μA)
Gate Quiescent Voltage
(V_DS = 28 V, I_D = 100 mA)
Drain- Source On - Voltage
(V_GS = 10 V, I_D = 0.5 A)
Forward Transconductance
(V_DS = 10 V, I_D = 1 A)
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 10 W PEP, I_DQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
V_(BR)DSS
65
I_DSS
—
I_GSS
—
V_GS(th)
2.5
V_GS(Q)
2.5
V_DS(on)
—
g_fs
—
C_rss
—
G_ps
12
Two - Tone Drain Efficiency
(V_DD = 28 Vdc, P_out = 10 W PEP, I_DQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
η
31
Third Order Intermodulation Distortion
(V_DD = 28 Vdc, P_out = 10 W PEP, I_DQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IMD
—
Input Return Loss
(V_DD = 28 Vdc, P_out = 10 W PEP, I_DQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
IRL
—
Output Power, 1 dB Compression Point, CW
(V_DD = 28 Vdc, I_DQ = 100 mA, f = 2170 MHz)
Common- Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 10 W CW, I_DQ = 100 mA,
f = 2170 MHz)
P1dB
—
G_ps
—
Drain Efficiency
(V_DD = 28 Vdc, P_out = 10 W CW, I_DQ = 100 mA,
f = 2170 MHz)
η
—
Typ
—
—
—
3
4
0.4
0.95
1
13.5
35
- 35
- 12
11
12
42
Max
Unit
—
Vdc
10
μAdc
1
μAdc
4
Vdc
4.5
Vdc
0.5
Vdc
—
S
—
pF
—
dB
—
%
- 30
dBc
- 10
dB
—
W
—
dB
—
%
MRF21010LR1 MRF21010LSR1
2
RF Device Data
Freescale Semiconductor