MRF19045LR3_08 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1990 MHz
Z_o = 25 Ω
Z_load
f = 1930 MHz
f = 1930 MHz
Z_source
f = 1990 MHz
V_DD = 26 V, I_DQ = 550 mA, P_out = 9.5 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
15.52 - j16.5
14.24 - j14.44
11.11 - j13.01
4.52 - j1.86
3.85 - j1.04
3.44 - j0.69
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
7