MRF19045LR3_08 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
40
− 25
35
V_DD = 26 Vdc
− 30
30
I_DQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
− 35
25
− 40
20
− 45
15
Gps
− 50
10
− 55
IMD
5
− 60
η
0
− 65
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS PEP)
Figure 9. CW Two-Tone Power Gain, IMD and
Drain Efficiency versus Output Power
− 25
−30 ^{VDD = 26 Vdc}
f1 = 1960 MHz, f2 = 1960.1 MHz
− 35
350 mA
− 40
700 mA
− 45
− 50
550 mA
− 55
− 60
450 mA
− 65
− 70
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS PEP)
Figure 11. CW Two-Tone Intermodulation Distortion
versus Output Power
40
0
η
35
−5
30
V_DD = 26 Vdc
I_DQ = 450 mA
− 10
100 kHz Tone Spacing
25
IRL
− 15
20
− 20
15
Gps
− 25
10
IMD
− 30
5
− 35
1900
1930
1960
1990
2020
f, FREQUENCY (MHz)
Figure 10. CW Two-Tone Power Gain, Input Return Loss,
IMD and Drain Efficiency versus Frequency
16.0
15.5
700 mA
15.0
550 mA
14.5
450 mA
14.0
13.5
13.0
0.1
350 mA
1.0
V_DD = 26 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
10
100
P_out, OUTPUT POWER (WATTS PEP)
Figure 12. CW Two-Tone Power Gain versus
Output Power
− 20
− 30
V_DD = 26 Vdc
I_DQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
− 40
− 50
3rd Order
− 60
− 70
5th Order
− 80
7th Order
− 90
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS PEP)
Figure 13. CW Two-Tone Intermodulation Distortion Products
versus Output Power
MRF19045LR3 MRF19045LSR3
6
0
1.2288 MHz
− 10
Channel BW
− 20
−IM3 in
− 30
1.2288 MHz
Integrated BW
− 40
+IM3 in
1.2288 MHz
Integrated BW
− 50
− 60
− 70
−ACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
− 80
− 90
− 100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
RF Device Data
Freescale Semiconductor