MRF19045LR3_08 Datasheet, PDF (5/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
40
V_DD = 26 Vdc
35 _{IDQ = 450 mA}
f1 = 1960 MHz, f2 = 1960.1 MHz
30
25
− 30
− 35
IM3
− 40
η
− 45
20
− 50
ACPR
15
− 55
G_ps
10
− 60
5
− 65
0
− 70
1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
35
30
25
20
15
10
5
1900
V_DD = 26 Vdc, I_DQ = 550 mA 2.5 MHz Carrier Spacing
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
IRL
η
IM3
G_ps
ACPR
1930
1960
1990
0
− 10
− 20
− 30
− 40
− 50
− 60
2020
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
− 30
V_DD = 26 Vdc
I_DQ = 550 mA
−35 ^{f1 = 1960 MHz, f2 = 1962.5 MHz}
350 mA
− 40
450 mA
− 45
550 mA
700 mA
− 50
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
− 55
0 1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
15.5
700 mA
15.0
550 mA
450 mA
14.5
350 mA
14.0
13.5
0
V_DD = 26 Vdc, I_DQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
− 45
V_DD = 26 Vdc
I_DQ = 550 mA
−50 _{f1 = 1960 MHz, f2 = 1962.5 MHz}
350 mA
− 55
− 60
− 65
− 70
0
450 mA
700 mA
550 mA
1 234
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
70
17
60
P1dB
Pout
16
P3dB
50
15
η
40
14
30
13
20
Gps
12
V_DD = 26 Vdc
10
I_DQ = 550 mA
11
f = 1960 MHz
0
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
P_in, INPUT POWER (WATTS CW)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
5