MRF19045LR3_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
μAdc
I_GSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 100 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 550 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
g_fs
—
—
4
Vdc
3.8
5
Vdc
0.19
0.21
Vdc
4.2
—
S
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1.0 MHz)
C_rss
—
1.8
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common - Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 9.5 W Avg, 2 - Carrier N - CDMA,
I_DQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
G_ps
13
14.5
—
dB
Drain Efficiency
(V_DD = 26 Vdc, P_out = 9.5 W Avg, 2 - Carrier N - CDMA,
I_DQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
η
21
23.5
—
%
3rd Order Intermodulation Distortion
IM3
—
- 37
- 35
dBc
(V_DD = 26 Vdc, P_out = 9.5 W Avg, 2 - Carrier N - CDMA,
I_DQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz; IM3 Measured in
a 1.2288 MHz Integrated Bandwidth Centered at f1 - 2.5 MHz and
f2 +2.5 MHz, Referenced to the Carrier Channel Power)
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 26 Vdc, P_out = 9.5 W Avg, 2-carrier N-CDMA, I_DQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz; ACPR measured in a 30 kHz
Integrated Bandwith Centered at f1 - 885 kHz and f2 +885 kHz)
- 51
- 45
dBc
Input Return Loss
(V_DD = 26 Vdc, P_out = 9.5 W Avg, 2 - Carrier N - CDMA,
I_DQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
P_out, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 550 mA, f = 1930 MHz)
1. Part is internally matched both on input and output.
IRL
—
- 16
-9
dB
P1dB
—
45
—
W
MRF19045LR3 MRF19045LSR3
2
RF Device Data
Freescale Semiconductor