MRF18030BLR3 Datasheet, PDF (7/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PACKAGE DIMENSIONS
SEE NOTE 4
2X K
N (LID)
ccc M T A M B M
E
G
1
3
2X Q
bbb M T B M A M
B
B
2
2X D
bbb M T A M B M
ccc M T A M B M
R (LID)
C
F
aaa M T A M B M
M
(INSULATOR)
A
A
T
SEATING
PLANE
S
(INSULATOR)
aaa M T A M B M
CASE 465E - 04
ISSUE F
NI - 400
MRF18030BLR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .795 .805 20.19 20.44
B .380 .390 9.65 9.9
C .125 .163 3.17 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
G
.600 BSC
15.24 BSC
H .057 .067 1.45 1.7
K .092 .122 2.33 3.1
M .395 .405
10 10.3
N .395 .405
10 10.3
Q .120 .130 3.05 3.3
R .395 .405
10 10.3
S .395 .405
10 10.3
H ^{aaa .005 BSC}
bbb .010 BSC
0.127 BSC
0.254 BSC
ccc .015 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X D
bbb M T A M B M
1
2
2X K
ccc M T A M B M
E
N (LID) _C
A
A
T
SEATING
PLANE
(FLANGE)
M (INSULATOR)
aaa M T A M B M
R (LID)
ccc M T A M B M
F
3
H
S (INSULATOR)
aaa M T A M B M
B
B
(FLANGE)
CASE 465F - 04
ISSUE E
NI - 400S
MRF18030BLSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .395 .405 10.03 10.29
B .395 .405 10.03 10.29
C .125 .163 3.18 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
H .057 .067 1.45 1.70
K .092 .122 2.34 3.10
M .395 .405 10.03 10.29
N .395 .405 10.03 10.29
R .395 .405 10.03 10.29
S .395 .405 10.03 10.29
aaa .005 REF
0.127 REF
bbb .010 REF
0.254 REF
ccc .015 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
RF Device Data
Freescale Semiconductor
MRF18030BLR3 MRF18030BLSR3
7