MRF18030BLR3 Datasheet, PDF (4/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
15
G_ps @ 15 W
14
G_ps @ 30 W
13
IRL @ 30 W
12
11
V_DD = 26 Vdc
I_DQ = 250 mA
T = 25_C
10
1850
1900
IRL @ 15 W
1950
2000
f, FREQUENCY (MHz)
0
−5
−10
−15
−20
−25
−30
2050
40
35
P_in = 2 W
30
1W
25
20
0.5 W
15
V_DD = 26 Vdc
I_DQ = 250 mA
T = 25_C
10
0.25 W
5
0
1880 1900 1920 1940
1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
Figure 4. Output Power versus Frequency
16
I_DQ = 400 mA
15
300 mA
14
200 mA
13
12
100 mA
11
10
0.1
1
V_DD = 26 Vdc
f = 1960 MHz
T = 25_C
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
15
T = 25_C
14
55_C
13 ^85_C
12
11
10 ^{VDD = 26 Vdc}
I_DQ = 250 mA
9 ^{f = 1960 MHz}
0.1
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 6. Power Gain versus Output Power
15
14
13
12
30 V
28 V
11 _{IDQ = 250 mA}
f = 1960 MHz
T = 25_C
10
1
V_DD = 22 V
26 V
24 V
10
100
P_out, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
16
60
15
50
G_ps
14
40
13
30
12
11
10
0.1
20
h
V_DD = 26 Vdc
I_DQ = 250 mA
10
f = 1960 MHz
T = 25_C
0
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18030BLR3 MRF18030BLSR3
4
RF Device Data
Freescale Semiconductor