MRF18030BLR3 Datasheet, PDF (5/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2110 MHz
f = 1710 MHz
Z_o = 25 Ω
Z_load
f = 2110 MHz
f = 1710 MHz
Z_source
V_DD = 26 V, I_DQ = 250 mA, P_out = 30 W (CW)
f
MHz
Z_source
Ω
Z_load
Ω
1710
1785
1805
2.92 - j8.24
3.84 - j9.75
4.15 - j10.38
4.18 - j9.06
4.59 - j9.46
4.98 - j9.06
1840
1880
1960
4.04 - j10.22
6.12 - j12.29
6.20 - j12.29
6.10 - j7.63
5.83 - j6.89
5.55 - j6.33
1990
2110
8.61 - j12.10
15.19 - j11.85
5.93 - j6.66
3.82 - j5.33
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 9. Series Equivalent Source and Load Impedance
MRF18030BLR3 MRF18030BLSR3
5