MRF18030BLR3 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_C = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 100 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 250 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Functional Tests (In Freescale Test Fixture) ⁽²⁾
Output Power, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 250 mA, f = 1930 - 1990 MHz)
Common- Source Amplifier Power Gain @ 30 W
(V_DD = 26 Vdc, I_DQ = 250 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 30 W
(V_DD = 26 Vdc, I_DQ = 250 mA, f = 1930 - 1990 MHz)
Input Return Loss @ 30 W
(V_DD = 26 Vdc, I_DQ = 250 mA, f = 1930 - 1990 MHz)
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
V_(BR)DSS
65
I_DSS
—
I_GSS
—
V_GS(th)
2
V_GS(Q)
2
V_DS(on)
—
g_fs
—
C_rss
—
P1dB
G_ps
η
IRL
27
13
46.5
—
Typ
—
—
—
3
3.9
0.29
2
1.3
30
14
50
- 12
Max
—
1
1
4
4.5
0.4
—
—
—
—
—
-9
Unit
Vdc
μAdc
μAdc
Vdc
Vdc
Vdc
S
pF
W
dB
%
dB
MRF18030BLR3 MRF18030BLSR3
2
RF Device Data
Freescale Semiconductor