MRF6S21140HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, P_out = 140 W (PEP), I_DQ = 1200 mA
Two−Tone Measurements
−20 ^{(f1 + f2)/2 = Center Frequency of 2140 MHz}
−30 ^{3rd Order}
−40 ^{5th Order}
−50 7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
35
30
V_DD = 28 Vdc, I_DQ = 1200 mA
f1 = 2135 MHz, f2 = 2145 MHz
25_C
2−Carrier W−CDMA, 10 MHz Carrier 85_C
−25
−30_C
85_C _−30
25_C IM3
Spacing. 3.84 MHz Channel
25 _{Bandwidth. PAR = 8.5 dB}
@ 0.01% Probability (CCDF)
η_D
20
−30_C _−35
−40
T_C = − 30_C G_ps
15
−45
85_C
10
25_C
85_C
−50
25_C _ACPR
5
−30_C
−55
0
−60
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
58
57
Ideal
56
P3dB = 52.6 dBm (180 W)
55
54
53 ^{P1dB = 52 dBm (158.5 W)}
52
Actual
51
50
V_DD = 28 Vdc, I_DQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
49
f = 2140 MHz
48
32
34
36
38
40
42
44
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
18
V_DD = 28 Vdc
I_DQ = 1200 mA
17 _{f = 2140 MHz}
T_C = −30_C
−30_C
60
25_C
50
85_C
16
25_C
15
85_C
40
G_ps
30
14
20
η_D
13
10
12
0
1
10
100
1000
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
15
14
32 V
13
28 V
12
16 V
11
10 ^{VDD = 12 V}
9
0
50
24 V
20 V
100
150
I_DQ = 1200 mA
f = 2140 MHz
200
250
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
6
RF Device Data
Freescale Semiconductor