MRF6S21140HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.6
30
15.5
η_D ²⁸
V_DD = 28 Vdc, P_out = 30 W (Avg.),
15.4 _{IDQ = 1200 mA, 2−Carrier W−CDMA,}
26
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, G_ps
15.3 ^{PAR = 8.5 dB @ 0.01% Probability (CCDF)}
−32
−12
IRL
15.2
−36
−15
IM3
15.1
ACPR ^−40
−18
15
−44
−21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 30 Watts Avg.
15
42
14.9
40
η_D
14.8
V_DD = 28 Vdc, P_out = 60 W (Avg.),
G_{ps 38}
I_DQ = 1200 mA, 2−Carrier W−CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
14.7
Bandwidth, PAR = 8.5 dB @ 0.01%
IRL _−24
−12
Probability (CCDF)
14.6
IM3 ^−27
−15
14.5
−30
−18
ACPR
14.4
−33
−21
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 60 Watts Avg.
17
I_DQ = 1800 mA
1500 mA
16
1200 mA
15 _{900 mA}
14
600 mA
13
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
12
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
V_DD = 28 Vdc
−25 ^{f1 = 2135 MHz, f2 = 2145 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−35
I_DQ = 600 mA
1800 mA
−40
−45
1500 mA
−50
900 mA
−55
1200 mA
−60
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
5