MRF6S21140HR3 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PACKAGE DIMENSIONS
B
B
(FLANGE)
K
G
1
2X Q
bbb M T A M B M
3
2
D
bbb M T A M B M
H
E
A
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
F
T
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
MRF6S21140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
Q .118 .138
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
33.91 34.16
13.6 13.8
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
3.00 3.51
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
B
1
B
(FLANGE)
K
2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
H
C
E
A
A
(FLANGE)
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S21140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.905 0.915
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
22.99 23.24
13.60 13.80
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF6S21140HR3 MRF6S21140HSR3
11