MRF6522-70R3_06 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
−10
18
G_ps
−15
17
−20
16
−25
910 920
IRL
930
940
950
f, FREQUENCY (MHz)
V_DS = 26 Vdc
I_DQ = 400 mA
15
960 970
Figure 11. Performance in Broadband Circuit (at Small Signal)
MRF6522 - 70R3
4-6
Freescale Semiconductor
RF Product Device Data