MRF6522-70R3_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
80
70
P_out
60
50
h
40
30
20
V_DS = 26 Vdc
10
I_DQ = 400 mA
f = 960 MHz
0
0
0.5
1.0
1.5
P_in, INPUT POWER (WATTS)
Figure 8. Efficiency and Output Power
versus Input Power
80
70
60
50
40
30
20
10
0
2.0
20
70
19
60
18
50
G_ps
17
40
16
30
15
h
V_DS = 26 Vdc
20
f = 921 MHz
14
10
13
0
0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96
P_in, INPUT POWER (WATTS)
Figure 9. Power Gain and Efficiency
versus Input Power
Freescale Semiconductor
RF Product Device Data
20
70
19
60
18
50
17
G_ps
40
16
30
15
h
V_DS = 26 Vdc
20
f = 960 MHz
14
10
13
0
0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70
P_in, INPUT POWER (WATTS)
Figure 10. Power Gain and Efficiency
versus Input Power
MRF6522 - 70R3
4-5