MRF6522-70R3_06 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 3. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 400 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
3
4
Vdc
V_GS(Q)
3
4
5
Vdc
V_DS(on)
—
0.15
0.6
Vdc
g_fs
2
3
—
S
Dynamic Characteristics
Input Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
C_iss
—
130
—
pF
C_oss
41
47
52
pF
C_rss
2.4
3
3.4
pF
Functional Tests (In Freescale Test Fixture)
Output Power ⁽²⁾
P1dB
73
80
—
W
(V_DD = 26 Vdc, I_DQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Common - Source Amplifier Power Gain @ P1dB (Min) (2)
G_ps
14
16
18
dB
(V_DD = 26 Vdc, I_DQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ P_out = 50 W
η₁
47
51
—
%
(V_DD = 26 Vdc, I_DQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ P1dB ⁽²⁾
η₂
—
58
—
%
(V_DD = 26 Vdc, I_DQ = 400 mA, f = Full GSM Band 921 - 960 MHz)
Input Return Loss @ P_out = 50 W
(V_DD = 26 Vdc, I_DQ = 400 mA,
f = 921 MHz and 960 MHz
f = 940 MHz)
IRL
dB
—
—
- 10
—
—
- 15
1. Value excludes the input matching.
2. To meet application requirements, Freescale test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch
consistency.
MRF6522 - 70R3
4-2
Freescale Semiconductor
RF Product Device Data