MRF6522-70R3_06 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common source
amplifier applications in 26 volt base station equipment.
• Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output
Power
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Document Number: MRF6522 - 70
Rev. 8, 5/2006
MRF6522 - 70R3
921 - 960 MHz, 70 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465D - 05, STYLE 1
NI - 600
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +65
± 20
7
159
0.9
- 65 to +150
150
200
Value
1.1
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MRF6522 - 70R3
4-1