MRF5S4125NR1 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
−20 _{Two −Tone Measurements, 2.5 MHz Tone Spacing}
− 30
3rd Order
− 40
− 50
5th Order
− 60
7th Order
− 70
1
10
100 200 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
− 10
V_DD = 28 Vdc, P_out = 120 W (PEP)
I_DQ = 1100 mA, Two −Tone Measurements
−20 ^{(f1 + f2)/2 = Center Frequency of 465 MHz}
IM3 −U
− 30
IM3 −L
IM5 −L
−40 IM5 −U
IM7 −U
− 50
IM7 −L
− 60
1
10
100
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
59
Ideal
58
P6dB = 52.98 dBm (198.6 W)
57
56 _{P3dB = 52.26 dBm (168.27 W)}
55
54 _{P1dB = 51.16 dBm (130.62 W)}
53
52
Actual
51
V_DD = 28 Vdc, I_DQ = 1100 mA
50
CW
f = 465 MHz
49
24 25 26 27 28 29 30 31 32 33 34 35 36
P_in, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
− 25
45 ^{VDD = 28 Vdc, IDQ = 1100 mA, f = 465 MHz}
− 30
Single −Carrier N−CDMA
40 _{1.2288 MHz Channel Bandwidth, PAR = 9.8 dB}
− 35
35 ^{@ 0.01% Probability (CCDF)}
− 40
30
85_C
25
25_C ^Gps _{TC = −30_C}
ACPR −45
− 50
20
15
25_C −30_C ^85_C
η_D
10
− 55
− 60
ALT1 _−65
5
25_C
− 30_C
− 70
0
85_C
− 75
1
10
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
6
RF Device Data
Freescale Semiconductor