MRF5S4125NR1 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 465 MHz: V_DD = 28 Volts,
I_DQ = 1100 mA, P_out = 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S4125N
Rev. 0, 1/2007
MRF5S4125NR1
MRF5S4125NBR1
450 - 480 MHz, 25 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF5S4125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF5S4125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature ^(1,2)
V_DSS
- 0.5, +65
Vdc
V_GS
- 0.5, +15
Vdc
T_stg
- 65 to +150
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
R_θJC
0.33
0.43
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S4125NR1 MRF5S4125NBR1
1