MRF5S4125NR1 Datasheet, PDF (5/15 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
25
36
24
32
23 η_D
28
22
G_ps
21
ACPR
V_DD = 28 Vdc, P_out = 25 W (Avg.)
I_DQ = 1100 mA, Single−Carrier N−CDMA
24
− 45
0
20
1.2288 MHz Channel Bandwidth
− 50
−5
PAR = 9.8 dB @ 0.01% Probability (CCDF)
19
− 55
− 10
IRL
18
ALT1
− 60
− 15
17
− 65
− 20
420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P_out = 25 Watts Avg.
25
52
24
48
23
η_D
22
21 _Gps
20
19 ^ACPR
IRL
18
44
40
V_DD = 28 Vdc, P_out = 58 W (Avg.)
I_DQ = 1100 mA, Single−Carrier N−CDMA ^−20
0
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF) ^−30
−5
− 40
− 10
− 50
− 15
17 ^ALT1
− 60
− 20
420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P_out = 58 Watts Avg.
25
I_DQ = 1650 mA
24
1375 mA
23
1100 mA
22
825 mA
21
550 mA
20
V_DD = 28 Vdc
19
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
18
1
10
100 200 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
−20 ^{Two −Tone Measurements, 2.5 MHz Tone Spacing}
I_DQ = 550 mA
− 30
562.5 mA
825 mA
− 40
1375 mA
− 50
1
1100 mA
10
100 200 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S4125NR1 MRF5S4125NBR1
5