MRF5S4125NR1 Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 400 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1100 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.5 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
2
3
4
Vdc
V_GS(Q)
3.5
4.25
5
Vdc
V_DS(on)
0.05
0.175
0.3
Vdc
C_rss
—
2.41
—
pF
C_oss
—
74.61
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1100 mA, P_out = 25 W Avg. N - CDMA, f = 465 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
22
23
25
dB
Drain Efficiency
η_D
28
30.2
—
%
Adjacent Channel Power Ratio
ACPR
—
- 47.6
- 45
dBc
Input Return Loss
IRL
—
- 15
-9
dB
1. Part internally input matched.
MRF5S4125NR1 MRF5S4125NBR1
2
RF Device Data
Freescale Semiconductor