MRF377HR3_09 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 875 MHz
f = 845 MHz
Z_load
Z_source
f = 875 MHz
f = 845 MHz
Z_o = 10 Ω
V_DD = 32 V, I_DQ = 2000 mA, P_out = 45 W Avg., DVBT OFDM
f
MHz
Z_source
Ω
Z_load
Ω
845
4.66 - j5.90
8.59 - j4.22
860
4.38 - j5.64
9.36 - j4.95
875
3.93 - j5.33
9.39 - j6.06
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
−
Z _source
−
+
Z _load
Output
Matching
Network
Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance
MRF377HR3
6
RF Device Data
Freescale Semiconductor