MRF377HR3_09 Datasheet, PDF (11/14 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 470 MHz
Z_o = 10 Ω
Z_source
f = 860 MHz
f = 470 MHz
Z_load
Z_o = 10 Ω
f = 860 MHz
Optimized for V_DD = 32 V, I_DQ = 2000 mA, P_out = 45 W Avg., DVBT OFDM
f
MHz
Z_source
Ω
Z_load
Ω
470
5.79 - j2.40
6.21 - j1.69
560
6.63 - j2.63
5.66 - j1.12
660
6.57 - j4.03
6.76 - j1.00
760
6.67 - j4.55
6.57 - j1.91
860
5.34 - j6.28
7.37 - j5.45
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
−
Z _source
−
+
Z _load
Output
Matching
Network
Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF377HR3
11