MRF377HR3_09 Datasheet, PDF(3/14 Page) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF377HR3_09 Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Drain Efficiency

(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)

f = 470 MHz

f = 560 MHz

f = 660 MHz

f = 760 MHz

f = 860 MHz

Î·D

Adjacent Channel Power Ratio

(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)

f = 470 MHz

f = 560 MHz

f = 660 MHz

f = 760 MHz

f = 860 MHz

ACPR

Typical Performances (1) (In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)

Common Source Power Gain

(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)

f = 470 MHz

f = 560 MHz

f = 660 MHz

f = 760 MHz

f = 860 MHz

Gps

Drain Efficiency

(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)

f = 470 MHz

f = 560 MHz

f = 660 MHz

f = 760 MHz

f = 860 MHz

Î·D

Intermodulation Distortion

(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)

f = 470 MHz

f = 560 MHz

f = 660 MHz

f = 760 MHz

f = 860 MHz

IMD

1. Measurement made with device in push - pull configuration.

Typ

23.5

25.8

23.0

22.7

21.3

- 59.3

- 58.7

- 58.1

17.5

17.2

16.6

31.0

34.3

30.1

29.6

27.8

31.7

32.7

32.9

34.2

35.4

Max

Unit

dBc

RF Device Data

Freescale Semiconductor

MRF377HR3

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