MRF377HR3_09 Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics ⁽¹⁾
Drain - Source Breakdown Voltage ⁽⁴⁾
(V_GS = 0 Vdc, I_D =10 μA)
V_(BR)DSS
65
Zero Gate Voltage Drain Current ⁽⁴⁾
(V_DS = 32 Vdc, V_GS = 0 Vdc)
I_DSS
—
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μA)
V_GS(th)
—
On Characteristics
Gate Quiescent Voltage ⁽³⁾
(V_DS = 32 Vdc, I_D = 2000 mAdc)
V_GS(Q)
2.5
Drain - Source On - Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 3 A)
V_DS(on)
—
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
Functional Tests ⁽³⁾ (In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(V_DD = 32 Vdc, P_out = 45 W Avg., I_DQ = 2000 mA,
f = 860 MHz)
G_ps
16.5
Drain Efficiency
(V_DD = 32 Vdc, P_out = 45 W Avg., I_DQ = 2000 mA,
f = 860 MHz)
η_D
21
Adjacent Channel Power Ratio
(V_DD = 32 Vdc, P_out = 45 W Avg., I_DQ = 2000 mA,
f = 860 MHz)
ACPR
—
Typical Performances ⁽³⁾ (In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(V_DD = 32 Vdc, P_out = 45 W Avg., I_DQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G_ps
—
—
—
—
—
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
Typ
Max
—
—
—
1
—
1
2.8
—
3.5
4.5
0.27
—
3.2
—
18.2
—
22.9
—
- 59.2
- 57
17.6
—
17.6
—
17.4
—
17.4
—
16.8
—
Unit
Vdc
μAdc
μAdc
Vdc
Vdc
Vdc
pF
dB
%
dBc
dB
(continued)
MRF377HR3
2
RF Device Data
Freescale Semiconductor