MRF6S24140H Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — 2450 MHz
16
I_DQ = 1200 mA
f = 2450 MHz
15
14
G_ps
50
V_DD = 28 V
32 V
40
30 V
30
13
20
12
32 V
10
_D
11
1
10
28 V
100
30 V
0
500
P_out, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of V_DD
14.5
60
G_ps
14
50
13.5
40
13
30
12.5
20
12
_D
11.5
1
V_DD = 32 V
I_DQ = 1200 mA
10
f = 2450 MHz
0
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
15
G_ps
14
1400 mA
1200 mA
1000 mA
13
1100 mA 1300 mA
12
11
V_DD = 28 V
f = 2450 MHz
10
1
10
100
300
P_out, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total I_DQ
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
5