MRF6S24140H Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
Date
Mar. 2007
Apr. 2008
Feb. 2009
Mar. 2010
Feb. 2012
Description
 Initial Release of Data Sheet
 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
 Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
 Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 2
 Fig. 1, Test Circuit Schematic, Z--list, corrected PCB information to reflect Taconic as manufacturer, p. 3
 Fig. 4, Power Gain and Drain Efficiency versus CW Output Power, corrected 28 V to read 32 V, p. 5
 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 8
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
 Fig. 6, MTTF versus Junction Temperature removed, p. 5. Refer to the device’s MTTF Calculator available
at freescale.com/RFpower. Go to Design Resources > Software and Tools.
 Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 7--8. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
 Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
11