MRF6S24140H Datasheet, PDF(2/12 Page) Freescale Semiconductor, Inc

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MRF6S24140H Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA = 25ï°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

IGSS

ïAdc

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 ïAdc)

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ï± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

Vdc

VGS(Q)

2.8

Vdc

VDS(on)

0.1

0.21

0.3

Vdc

Crss

Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier

W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ï±5 MHz Offset. IM3 measured in

3.84 MHz Bandwidth @ ï±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

15.2

Drain Efficiency

ï¨D

Intermodulation Distortion

IM3

--37

--35

dBc

Adjacent Channel Power Ratio

ACPR

--40

--38

dBc

Input Return Loss

IRL

--15

1. Part internally matched both on input and output.

MRF6S24140HR3 MRF6S24140HSR3

RF Device Data

Freescale Semiconductor, Inc.

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