MRF6S24140H Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
 Typical CW Performance at 2450 MHz, V_DD = 28 Volts, I_DQ = 1200 mA,
P_out = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Qualified Up to a Maximum of 32 V_DD Operation
 Integrated ESD Protection
 In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S24140H
Rev. 4, 2/2012
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF6S24140HR3
CASE 465C--03
NI--880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
V_GS
T_stg
T_C
T_J
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
R_JC
0.29
0.33
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
C
C
C
Unit
C/W
 Freescale Semiconductor, Inc., 2007--2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
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